Static information storage and retrieval – Read/write circuit – Bad bit
Reexamination Certificate
2007-08-14
2007-08-14
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Read/write circuit
Bad bit
Reexamination Certificate
active
11262105
ABSTRACT:
A redundancy circuit in a semiconductor memory device comprises a fuse set controller configured to output a redundancy enable signal enabled according to applied address signals; a redundant selector; a spare redundant selector; and a spare fuse controller configured to be controlled by the redundancy enable signal, and to output a selection control signal that selects at least one of the redundant selector and the spare redundant selector in accordance with an internal fuse option.
REFERENCES:
patent: 6041000 (2000-03-01), McClure et al.
patent: 6404683 (2002-06-01), Yumoto
patent: 6731560 (2004-05-01), Yoon et al.
patent: 6771555 (2004-08-01), Kang
patent: 0177407 (1998-11-01), None
Hoang Huan
Hynix / Semiconductor Inc.
Townsend & Townsend & Crew LLP
Tran Anthan
LandOfFree
Redundancy circuit in semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Redundancy circuit in semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Redundancy circuit in semiconductor memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3900144