Redundancy circuit for use in a semiconductor memory device

Details Redundancy circuit for use in a semiconductor memory device Redundancy circuit for use in a semiconductor memory device

1987-05-01

1988-12-27

Popek, Joseph A.

Static information storage and retrieval

Read/write circuit

Bad bit

365210, G11C 700

Patent

active

047945680

ABSTRACT:
A normal decoder and a redundant decoder having address program devices are used for the replacement of bad cells. The number of address program devices is one more than the number of input address bits for selecting a normal row or column. The input signals of the additional program device are complementary to the input signals of one of the other program devices. The program of the program devices have two steps to repair the faulty cells. To increase the reliability of redundancy, a nonvolatile memory element used in the program devices is a bridge connected four cell FLOTOX type nonvolatile memory device.

REFERENCES:
patent: 4422161 (1983-12-01), Kressel et al.
patent: 4514830 (1985-04-01), Hagiwara et al.

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