Redundancy architecture for an integrated circuit memory

Static information storage and retrieval – Read/write circuit – Bad bit

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S225700, C365S230020

Reexamination Certificate

active

08004913

ABSTRACT:
An integrated circuit memory includes multiple memory banks grouped into repair groups Group0, Group1. One memory has redundant rows which can be used to substitute for a defective row found within any of the memory banks within the common repair group concerned. Redundant columns of memory cells may be substituted for defective columns by multiplexing circuitry. This multiplexing circuitry shifts the bit lines selected to form part of a bit group to access a given data bit by an amount less than the multiplexing width being supported by that multiplexing circuitry thereby reducing the number of redundant columns which need be provided.

REFERENCES:
patent: 6297997 (2001-10-01), Ohtani et al.
patent: 6320801 (2001-11-01), Kwak
patent: 7420859 (2008-09-01), Nautiyal
patent: 7495976 (2009-02-01), Mittal et al.
patent: 2001/0026476 (2001-10-01), De Ambroggi et al.
patent: 2002/0167855 (2002-11-01), Hsu et al.
patent: 2005/0018517 (2005-01-01), Collura et al.
patent: 2008/0266990 (2008-10-01), Loeffler
patent: 2009/0168569 (2009-07-01), Ryu
U.S. Appl. No. 11/785,583, filed Apr. 18, 2007; Inventor: Gajjewar et al.
Office Action mailed Jul. 20, 2010 in co-pending U.S. Appl. No. 11/785,583.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Redundancy architecture for an integrated circuit memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Redundancy architecture for an integrated circuit memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Redundancy architecture for an integrated circuit memory will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2788157

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.