Static information storage and retrieval – Read/write circuit – Bad bit
Patent
1995-06-05
1999-05-04
Lane, Jack A.
Static information storage and retrieval
Read/write circuit
Bad bit
365195, 365200, G11C 700
Patent
active
059010932
ABSTRACT:
An invention is disclosed which implements bit line redundancy in a memory module, such as a dynamic random access memory (DRAM), in accordance with a block write operation. The block write operation is commonly used in dual port RAMs, sometimes referred to as video random access memories (VRAM). Specifically, a block write operation allows a plurality of bits of data to be written to a plurality of adjacent bit lines defined by a column address. The precise combination of adjacent bit lines selected by the column address is designated by an address mask. The invention provides a memory module with a redundant bit decoder that incorporates an address masking function into the redundant bit decoder during block write operations and also bypasses a masking function during normal read and write operations. This redundant bit decoder allows a single redundant bit line to replace any single defective bit line of the selected group of block write bit lines. It eliminates the need for replacing all the selected bit lines and, thereby, saves silicon area and maximizes the utilization of available redundant bit elements.
REFERENCES:
patent: 4310901 (1982-01-01), Harding et al.
patent: 4380066 (1983-04-01), Spencer et al.
patent: 4571707 (1986-02-01), Watanabe
patent: 4601019 (1986-07-01), Shah et al.
patent: 4601031 (1986-07-01), Walker et al.
patent: 4689494 (1987-08-01), Chen et al.
patent: 4691301 (1987-09-01), Anderson
patent: 4791615 (1988-12-01), Pelley, III et al.
patent: 4807189 (1989-02-01), Pinkham et al.
patent: 4807191 (1989-02-01), Flannagan
patent: 4827452 (1989-05-01), Toyama et al.
patent: 4829480 (1989-05-01), Seo
patent: 4837747 (1989-06-01), Dosaka et al.
patent: 4849938 (1989-07-01), Furutani et al.
patent: 4858192 (1989-08-01), Tatsumi et al.
patent: 5134616 (1992-07-01), Barth, Jr. et al.
Translation of Office Action for Japanese Patent Application No. 99750/1992 mailed Oct. 4, 1994.
Translation of Japanese Patent Application No. 99999/1986 entitled "Semiconductor Memory Device".
Hiltebeitel Nathan Rafael
Tamlyn Robert
Tomashot Steven William
Wyckoff Thomas Walter
Chadurjian Mark F.
International Business Machines - Corporation
Lane Jack A.
Walsh Robert A.
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