Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2008-11-18
2011-12-13
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C257SE21090, C257SE21224
Reexamination Certificate
active
08076219
ABSTRACT:
A process for reducing or suppressing the appearance of watermarks in a hydrophobic surface of a semiconductor substrate prepared as a base substrate for epitaxial growth. The process includes cleaning the hydrophobic surface of the semiconductor substrate with an aqueous solution containing hydrofluoric acid (HF) and an additional acid having a pKa of less than 3, preferably hydrochloric acid (HCl), wherein the additional acid is present in the solution at a concentration by weight that is less than that of the HF; and final rinsing the cleaned hydrophobic surface of the semiconductor substrate with deionised water while subjecting the hydrophobic surface of the semiconductor substrate to megasonic waves for a time sufficient to reduce or suppress watermarks that could otherwise occur on the hydrophobic surface if the megasonic waves were not applied.
REFERENCES:
patent: 5051134 (1991-09-01), Schnegg et al.
patent: 5374564 (1994-12-01), Bruel
patent: 5932022 (1999-08-01), Linn et al.
patent: 6235122 (2001-05-01), Zhang et al.
patent: 6346505 (2002-02-01), Morita et al.
patent: 6348157 (2002-02-01), Ohmi et al.
patent: 6429144 (2002-08-01), Vines et al.
patent: 2002/0052096 (2002-05-01), Zhang et al.
patent: 2005/0139231 (2005-06-01), Abadie et al.
patent: 2006/0234516 (2006-10-01), Hong et al.
patent: 2007/0178706 (2007-08-01), Kim et al.
patent: 2007/0256705 (2007-11-01), Abbadie et al.
patent: 2008/0169007 (2008-07-01), Kashkoush et al.
patent: 2009/0042400 (2009-02-01), Pagliaro, Jr.
patent: 0 936 268 (1999-08-01), None
patent: WO 2007/024515 (2007-03-01), None
patent: WO 2007/140409 (2007-12-01), None
International Search Report, PCT/EP2008/065771, mailed Mar. 3, 2009.
Namba et al., “Insights Into Watermark Formation and Control”, Solid State Phenomena, vols. 103-104, pp. 83-86 (2005).
European Search Report, EP08305001, dated Apr. 3, 2008.
Jae-Inh Song et al., “Advanced Front-End-Of-The Line Cleaning”, Semiconductor Fabtech, pp. 1-5 (1996).
M.M. Heyns et al., “Cost-Effective Cleaning and High-Quality Thin Gate Oxides”, IBM J. Res. Develop. vol. 43, No. 3, pp. 339-350 (1999).
A.J. Auberton-Hervé et al, “Why Can Smart Cut® Change the Future of Microelectronics?”, International. Journal of High Speed Electronics and Systems, vol. 10, No. 1, pp. 131-146 (2000).
H. Okumura et al., XP002474819, “Comparison of Conventional Surface Cleaning Methods For Si Molecular Beam Epitaxy”, Journal of the Electrochemical Society, vol. 144, No. 11, pp. 3765-3768, (1997).
S. Verhaverbeke et al., XP008089904, “Isothermal epi-Si deposition at 800° C”, Electrochemical Society Proceedings, vol. 99-36, pp. 445-451 (2000).
H. B. Brugge et al., XP002474818, “Optimization Of Pre-Gate Clean Technology For A 0.35μm Dual-Oxide/Dual-Voltage CMOS Process”, Proceedings Of The SPIE- The International Society For Optical Engineering, vol. 3212, pp. 52-60, (1997).
J. P. Chang et al., XP008102746. “The Effect Of Dilute Cleaning And Rinsing Chemistries On Transition Metal Removal And Si Surface Microroughness” Electrochemical Society Proceedings, vol. 99-36, pp. 17-24 (2000).
Heui-Gyun Ahn et al., XP010370039, “Identification And Removal Of Defects On Silicon Wafer Processed With A Rinse With/Without Megasonics In DI Water”, IEEE, pp. 459-462 (1999).
Written Opinion , Singapore Application No. 201003322-3 dated Jun. 2, 2011.
Ghyka Alexander
Isaac Stanetta
S.O.I.Tec Silicon on Insulator Technologies
Winston & Strawn LLP
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