Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Patent
1997-04-09
1999-07-27
Mulpuri, Savitri
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
438518, 438522, H01L 21265
Patent
active
059279958
ABSTRACT:
A method for providing an epitaxial layer of a first material over a substrate comprising a second material having a lattice constant different from that of the first material. In the method of the present invention, a first layer of the first material is grown on the substrate. A portion of the first layer is treated to render that portion amorphous. The amorphous portion is then annealed at a temperature above the recrystallization point of the amorphous portion, but below the melting point of the crystallized portion of the first layer thereby recrystallizing the amorphous portion of the first layer. The first layer may rendered amorphous by ion implantation. The method may be used to generate GaN layers on sapphire having fewer dislocations than GaN layers generated by conventional deposition techniques.
REFERENCES:
patent: 4617066 (1986-10-01), Vasudev
patent: 4863877 (1989-09-01), Fan et al.
patent: 5223445 (1993-06-01), Fuse
patent: 5290393 (1994-03-01), Nakamura
patent: 5766695 (1998-06-01), Nguyen et al.
Anonymous, "Method to Change Resistivity Type of Semiconductors. May 1979." IBM Technical Disclosure Bulletin, vol. 21, No. 12, May 1979, pp. 5041.
Tan, H.H. et al. "Ion Implantation Processing of GaN Epitaxial Layers", Proceedings of First Symposium on II-V Nitride Materials . . . Los Angeles, California 6-8 May 1996, pp. 142-148.
Zolper et al "Ca SI O Ion Implantation of GaN" Appl-Phys. Lett. vol. 68. Apr. 1, 1996.
Tan et al "Annealing of Ion Implanted Gallium or Nitride". App. Phys. Letts., vol. 72, No. 10, Mar. 9, 1998.
Liu et al "Ion Implantation at Liquid Nitrogen Temperature Structural. Characteristics and Amorphization", Physics Review B, vol. 57, No. 4. Jan. 15, 1998.
S.J. Pearton et al, "Ion Implantation and Isolation of GaN". Appl. Phys. Lett., vol. 67, No. 10, Sep. 4, 1995.
S.C. Binari et al., "H, HE, and N Implant Isolation of N-type GaN" J. Appl. Phys., vol. 78, No. 5, Sep. 4, 1995.
Tan et al "Damage to Epitaxial GaN Layers by Silicon Implantation" Appl. Phys. Lett. 69(16), Oct. 14, 1996.
Chen Yong
Schneider, Jr. Richard P.
Wang Shih-Yun
Hewlett--Packard Company
Mulpuri Savitri
LandOfFree
Reduction of threading dislocations by amorphization and recryst does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Reduction of threading dislocations by amorphization and recryst, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reduction of threading dislocations by amorphization and recryst will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-871513