Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2007-11-27
2007-11-27
Hiteshew, Felisa (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S084000, C117S100000, C117S109000
Reexamination Certificate
active
10990607
ABSTRACT:
The invention is an improvement in a method of producing a high quality bulk single crystal of silicon carbide in a seeded sublimation system. The improvement includes etching the front face on each of a first and second SiC seed to a depth of greater than about 20 μm while protecting the opposite or back face on each of the first and second SiC seeds. Protection of the front faces occurs by placing the faces sufficiently close to one another to shield the back faces from being etched during etching of the respective unprotected front faces. Separation of the first and second SiC seeds occurs after the etching of the front faces is complete.
REFERENCES:
patent: 4866005 (1989-09-01), Davis et al.
patent: 4946547 (1990-08-01), Palmour et al.
patent: 5200022 (1993-04-01), Kong et al.
patent: 6306675 (2001-10-01), Tsong et al.
patent: 6376900 (2002-04-01), Yamada et al.
patent: 6600203 (2003-07-01), Takahashi et al.
patent: 6693022 (2004-02-01), Dreybrodt et al.
patent: 2002/0059902 (2002-05-01), Vodakov et al.
Sterling B. Hicks, Screw Dislocations and Charge Balance as Factors of Crystal Growth, American Mineralogist, vol. 40, pp. 139-146, 1955.
D. Chaussende et al., Vapour-Liquid-Solid Mechanism for the Growth of SiC Homoepitaxial Layers by VPE, Journal of Crystal Growth, vol. 234, pp. 63-69, 2002.
Mueller Stephan Georg
Powell Adrian
Tsvetkov Valeri F.
Cree Inc.
Hiteshew Felisa
Summa, Allan & Additon, P.A.
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