Reduction of reflection by amorphous carbon

Details Reduction of reflection by amorphous carbon Reduction of reflection by amorphous carbon

1997-05-05

1999-12-28

Utech, Benjamin

Etching a substrate: processes

Masking of a substrate using material resistant to an etchant

Mask is multilayer resist

430 5, 216 51, 216 79, 216 81, 438717, 438725, 438736, 438952, H01L 21302

Patent

active

060077328

ABSTRACT:
A pattern forming method having a step of forming an amorphous carbon film on a patterning layer formed on a substrate, a step of forming a photoresist film on the amorphous carbon film, a step of selectively exposing and developing the photoresist film to form a photoresist pattern, and a step of successively dry-etching the amorphous carbon film and the patterning layer by using the photoresist film as an etching mask. Desired optical constants of an amorphous carbon film formed by sputtering can be obtained by controlling a substrate temperature and other parameters.

REFERENCES:
patent: 4975144 (1990-12-01), Yamazaki et al.
patent: 5102498 (1992-04-01), Itoh et al.
patent: 5240554 (1993-08-01), Hori et al.
patent: 5302240 (1994-04-01), Hori et al.
patent: 5437961 (1995-08-01), Yano et al.
patent: 5656128 (1997-08-01), Hashimoto et al.
"Influence of DC Bias Voltage on the Refractive Index and Stress of Carbon-Diamond Films Deposited From Methane/Argon RF Plasma", J. Appl. Phys.; 1991, Amaratunga et al., 5374-5379.
"Etch Masks of Semimetallic Amorphous Carbon Thin Films Produced By Electro-Beam Sublimation of Graphitic Carbon", J. Vac. Sci. Tech.; B (1992), 10 (6); pp. 2681-2684, Porkolab et al.

Affiliated with

Also associated with

Rating

Reduction of reflection by amorphous carbon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Reduction of reflection by amorphous carbon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reduction of reflection by amorphous carbon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2380191