Reduction of reflection by amorphous carbon

Details Reduction of reflection by amorphous carbon Reduction of reflection by amorphous carbon

1994-03-24

1997-08-12

Breneman, R. Bruce

Etching a substrate: processes

Masking of a substrate using material resistant to an etchant

Mask is multilayer resist

438950, 438952, 438717, 430318, H01L 21306

Patent

active

056561288

ABSTRACT:
A pattern forming method having a step of forming an amorphous carbon film on a patterning layer formed on a substrate, a step of forming a photoresist film on the amorphous carbon film, a step of selectively exposing and developing the photoresist film to form a photoresist pattern, and a step of successively dry-etching the amorphous carbon film and the patterning layer by using the photoresist film as an etching mask. Desired optical constants of an amorphous carbon film formed by sputtering can be obtained by controlling a substrate temperature and other parameters.

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patent: 5240554 (1993-08-01), Hori et al.
patent: 5302240 (1994-04-01), Hori et al.
patent: 5437961 (1995-08-01), Yano et al.
"Etch Masks of Semimetallic Amorphous Carbon Thin Films Produced by Electron-Beam Sublimation of Graphitic Carbon"; J. Vac. Sci. Tech; B (1992); 10(6); pp. 2681-2684; Porkolab et al.
"Influence of DC Bias Voltage on the Refractive Index and Stress of Carbon-Diamond Films Deposited from Methane/Argon RF Plasma"; J. Appl. Phys; 1991; Amaratunga et al.; pp. 5374-5379.

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