Reduction of pattern sensitivity in ozone-teos deposition via a

Details Reduction of pattern sensitivity in ozone-teos deposition via a Reduction of pattern sensitivity in ozone-teos deposition via a

1995-06-23

1996-10-08

Konemund, Robert

Fishing, trapping, and vermin destroying

437238, 437978, H01L 21316

Patent

active

055631045

ABSTRACT:
An improved method of ozone-TEOS deposition with reduced pattern sensitivity using a two-step low and high temperature process is described. Semiconductor device structures are provided in and on a semiconductor substrate. A conducting layer is deposited overlying the surfaces of the semiconductor device structures and patterned to form conducting lines. An underlayer is deposited overlying the patterned conducting layer. A dielectric layer is deposited in two steps. A first ozone-TEOS layer is deposited over the surfaces of the conducting layer at a first temperature to a first thickness. A second ozone-TEOS layer is deposited over the first ozone-TEOS layer at a second temperature and to a second thickness wherein the second temperature is higher than the first temperature and the second thickness is greater than the first thickness completing the dielectric layer.

REFERENCES:
patent: 4872947 (1989-10-01), Wang et al.
patent: 5271972 (1993-12-01), Kwok et al.
patent: 5356722 (1994-10-01), Nguyen et al.
patent: 5376590 (1994-12-01), Machida et al.
patent: 5387546 (1995-02-01), Maeda et al.
patent: 5424253 (1995-06-01), Usami et al.
patent: 5459105 (1995-10-01), Matsuura
patent: 5518962 (1996-05-01), Murao
patent: 5525551 (1996-06-01), Ohta
Wolf, Stanley, "Si Proc for the VLSI Era" vol. 2, (1990) p. 194.

Affiliated with

Also associated with

Rating

Reduction of pattern sensitivity in ozone-teos deposition via a does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Reduction of pattern sensitivity in ozone-teos deposition via a , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reduction of pattern sensitivity in ozone-teos deposition via a will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-56941