Coating apparatus – Gas or vapor deposition
Patent
1990-06-28
1993-02-23
Bueker, Richard
Coating apparatus
Gas or vapor deposition
118725, 4272481, C23C 1600
Patent
active
051886723
ABSTRACT:
In an epitaxial reactor system using a vacuum pump which is connected to the reaction chamber by an exhaust line, particulate contaminants normally deposit in the exhaust line near its juncture with the reaction chamber. When the vacuum pump is isolated from the reaction chamber during a back-filling operation, these contaminants can be entrained in the currents of gas normally produced in the back-filling operation. A removable baffle having the shape of a truncated cone is placed in the exhaust line at its juncture with the reaction chamber to prevent these particles from re-entering the reaction chamber.
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Patent Abstracts of Japan, vol. 10, No. 296, (C-377), Oct. 8, 1986, & JP-A-61 111994, (Hitachi Ltd.), May 30, 1986.
Patent Abstracts of Japan, vol. 12, No. 316, (C-524) (3163), Aug. 26, 1988.
Patent Abstract of Japan, JP-A-63 089492, (Mitsubishi Electric Corp.), Apr. 20, 1988.
Applied Materials Inc.
Bueker Richard
Taylor John P.
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