Reduction of native oxide at germanium interface using...

Details Reduction of native oxide at germanium interface using... Reduction of native oxide at germanium interface using...

2005-09-20

2005-09-20

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Gettering of substrate

By implanting or irradiating

C438S796000

Reexamination Certificate

active

06946368

ABSTRACT:
A germanium substrate is positioned in a process chamber. A plasma is generated from a treatment gas that includes a flow of a hydrogen-containing gas. The plasma is provided to the process chamber to react with GeO2in the germanium substrate.

REFERENCES:
patent: 4590091 (1986-05-01), Rogers, Jr. et al.
patent: 2003/0139035 (2003-07-01), Yim et al.
patent: 2004/0241341 (2004-12-01), Lin

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