Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1998-12-16
2000-10-31
Bowers, Charles
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438241, H01L 2184
Patent
active
061401625
ABSTRACT:
A method of fabricating a liquid crystal display includes the steps of forming a semiconductive layer with doped regions defining source regions, offset regions, channel regions, drain regions and first storage electrodes in an insulated substrate, simultaneously doping source and drain regions while doping the first storage electrodes with impurities selectively and heavily, forming a gate electrode on the channel region and a second storage electrode on the first storage electrode wherein the gate electrode has a gate insulating layer disposed thereunder and the second storage electrode has a storage capacitor insulating layer disposed thereunder, forming an insulating interlayer covering an exposed surface of the substrate which includes the gate electrode and the first storage electrode, forming contact holes exposing each of the source region and the drain region, forming a source wire connected to the source region and a drain wire connected to the drain region, forming a passivation layer covering an exposed surface of the substrate which includes the source wire and the drain wire, forming a contact hole exposing the drain wire, and forming a pixel electrode connected to the drain wire.
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Bowers Charles
LG Electronics Inc.
Pert Evan
LandOfFree
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