Reduction of hillocks prior to dielectric barrier deposition...

Details Reduction of hillocks prior to dielectric barrier deposition... Reduction of hillocks prior to dielectric barrier deposition...

2008-05-13

2008-05-13

Chen, Bret (Department: 1792)

Coating processes

Interior of hollow article coating

Coating by vapor, gas, mist, or smoke

C427S578000, C134S022100

Reexamination Certificate

active

07371427

ABSTRACT:
Unwanted hillocks arising in copper layers due to formation of overlying barrier layers may be significantly reduced by optimizing various process parameters, alone or in combination. A first set of process parameters may be controlled to pre-condition the processing chamber in which the barrier layer is deposited. A second set of process parameters may be controlled to minimize energy to which a copper layer is exposed during removal of CuO prior to barrier deposition. A third set of process parameters may be controlled to minimize the thermal budget after removal of the copper oxide.

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