Reduction of field oxide step height during semiconductor fabric

Details Reduction of field oxide step height during semiconductor fabric Reduction of field oxide step height during semiconductor fabric

1995-10-10

1999-03-16

Fourson, George

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438697, H01L 2176

Patent

active

058829857

ABSTRACT:
A method for reducing the steep step at the edge of a locally oxidized, field oxide boundary region as a result of using the local oxidation of silicon (LOCOS) method to isolate the active regions of a semiconductor wafer. The reduction is carried out by applying a planarizing layer to the field oxide layer and then etching back the planarizing layer and field oxide layer to a desired thickness.

REFERENCES:
patent: 4539744 (1985-09-01), Burrow
patent: 5413953 (1995-05-01), Chien et al.
patent: 5472905 (1995-12-01), Paek et al.
patent: 5554560 (1996-09-01), Hsue et al.
Deal, B.E., et al, "General Relationship for the Thermal Oxidation of Silicon", J.Appl.Phys., vol. 36, No.12, Dec. 1965, pp. 3770-3778.

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