Reduction of drift in phase-change memory via...

Details Reduction of drift in phase-change memory via... Reduction of drift in phase-change memory via...

2011-07-12

2011-07-12

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S148000, C365S189160

Reexamination Certificate

active

07978508

ABSTRACT:
A method of programming a phase-change material. The method includes providing a transformation pulse to the phase-change material, where the transformation pulse includes a programming waveform and a conditioning waveform. The programming waveform provides sufficient energy to alter the structural state of the phase-change material. In one embodiment, the programming waveform alters the volume fractions of crystalline and amorphous phase regions within the phase-change material. The conditioning waveform provides sufficient energy to heat the phase-change material to a temperature above the ambient temperature but below the crystallization temperature of the phase-change material. The method programs the phase-change material to a state that exhibits a reduced time variation of resistance.

REFERENCES:
patent: 7746688 (2010-06-01), Kim et al.
patent: 2004/0228159 (2004-11-01), Kostylev et al.
patent: 2008/0144363 (2008-06-01), Lee et al.
patent: 2009/0095949 (2009-04-01), Kostylev et al.

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