Coating apparatus – Gas or vapor deposition – With treating means
Patent
1996-01-16
1997-04-22
Wilczewski, Mary
Coating apparatus
Gas or vapor deposition
With treating means
118726, C23C 1600
Patent
active
056225652
ABSTRACT:
The present invention provides an apparatus for semiconductor processing in which the reactor chamber and the vacuum conduit means connected to the chamber are coated with a film of halogenated polymer material having a low vapor pressure and a low sticking coefficient. Preferred materials include low molecular weight polyfluoroethylene polymers such as polytetrafluoroethylene and polychlorotrifluoro-ethylene. A method is provided to prevent contaminant buildup on coated surfaces of semiconductor processing chambers and vacuum conduit means connected thereto during processing of a workpiece.
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"Mass Accomodation Coefficient for HO.sub.2 Radicals on Aqueous Particles" by Michael Mozurkewich et al., Journal of Geophysical Research, vol. 92, No. D4, pp. 4163-4170, Apr. 20, 1987.
Gupta Anand
Shamouliam Shamouil
Ye Yan
Applied Materials Inc.
Dutton Brian K.
Guenzer Charles S.
Mulcahy Robert W.
Wilczewski Mary
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