Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – By application of corpuscular or electromagnetic radiation
Patent
1998-03-03
2000-08-08
Smith, Matthew
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
By application of corpuscular or electromagnetic radiation
438510, 438142, 438478, H01L 2142
Patent
active
061001716
ABSTRACT:
In one embodiment, the present invention relates to a method of removing fluorine from a gate conductor involving the steps of providing a semiconductor device containing a substrate, a gate insulator layer overlying a portion of the substrate, a gate conductor containing fluorine overlying the gate insulator layer, and a source and a drain region adjacent the gate insulator layer; and laser annealing the semiconductor device at an energy level sufficient to melt at least a portion of the gate conductor thereby inducing the removal of fluorine from the gate conductor. In another embodiment, the present invention relates to a method of making a transistor involving the steps of forming a gate conductor overlying a gate insulator layer, wherein the gate conductor and the gate insulator layer overlie a portion of a substrate, doping the substrate and gate conductor with BF.sub.2.sup.+ to form in the substrate a source region and a drain region adjacent the gate insulator layer and a channel region between the source and drain regions and under the gate insulator layer; laser annealing the doped gate conductor, the doped source region and the doped drain region at an energy level sufficient to melt at least a portion of the doped gate conductor, thereby removing fluorine from the melted portion of the gate conductor; and subsequently performing an RTA to activate the doped source region and the doped drain region
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Advanced Micro Devices , Inc.
Lee Granvill
Smith Matthew
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