Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-10-31
2006-10-31
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S762000, C257S765000, C257S767000, C257S771000, C438S607000, C438S687000, C438S689000, C438S691000
Reexamination Certificate
active
07129582
ABSTRACT:
A method of forming a semiconductor device includes implanting a precipitate into a gate conductor of an at least partially formed semiconductor device. The gate conductor including a plurality of semiconductor grains. The boundaries of adjacent grains forming a dopant migration path. A plurality of precipitate regions are formed within the gate conductor. At least some of the precipitate regions located at a junction of at least two grains. The gate conductor of the at least partially formed semiconductor device is doped with a dopant. The dopant diffuses inwardly along the dopant migration path.
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Chen Jihong
Liu Kaiping
Wu Zhiqiang
Brady III W. James
McLarty Peter K.
Pham Long
Rao Shrinivas H.
Telecky , Jr. Frederick J.
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