Reducing the effect of write disturbs in polymer memories

Details Reducing the effect of write disturbs in polymer memories Reducing the effect of write disturbs in polymer memories

2007-10-23

2007-10-23

Nguyen, Viet Q. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Molecular or atomic

C365S153000, C365S108000, C365S045000, C349S183000

Reexamination Certificate

active

11126685

ABSTRACT:
The write disturb that occurs in polymer memories may be reduced by writing back data after a read in a fashion which offsets any effect on the polarity of bits in bit lines associated with the addressed bit. For example, each time the data is written back, its polarity may be alternately changed. In another embodiment, the polarity may be randomly changed.

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