Reducing reverse short-channel effect with light dose of P with

Details Reducing reverse short-channel effect with light dose of P with Reducing reverse short-channel effect with light dose of P with

1997-09-03

1999-07-06

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257344, H01L 2976, H01L 2994

Patent

active

059201045

ABSTRACT:
Submicron nLDD CMOS logic devices with improved current drive and reduced reverse short-channel effects having heavily doped As and lightly doped P nLDD region.

REFERENCES:
patent: 4935379 (1990-06-01), Toyoshima
patent: 5512771 (1996-04-01), Hiroki et al.

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