Reducing resistivity in interconnect structures of...

Details Reducing resistivity in interconnect structures of... Reducing resistivity in interconnect structures of...

2011-04-05

2011-04-05

Bryant, Kiesha R (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S758000, C257SE23161

Reexamination Certificate

active

07919862

ABSTRACT:
An integrated circuit structure having improved resistivity and a method for forming the same are provided. The integrated circuit structure includes a dielectric layer, an opening in the dielectric layer, an oxide-based barrier layer directly on sidewalls of the opening, and conductive materials filling the remaining portion of the opening.

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