Reducing resist shrinkage during device fabrication

Details Reducing resist shrinkage during device fabrication Reducing resist shrinkage during device fabrication

1998-10-29

2000-08-22

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430325, 430328, G03F 740

Patent

active

061070025

ABSTRACT:
A method of fabricating an electronic device includes forming a pattern of a resist material on a substrate. The resist includes a polymer and an acid-generating agent. The resist pattern is exposed to radiation to activate the acid-generating agent, and a neutralizing agent is provided to reduce the bond-breaking activity of the acid with respect to protective groups attached to the resist polymer. The substrate can subsequently be etched with the resist pattern defining an etch mask. By activating the acid-generating agent in the resist pattern and neutralizing the acid prior to performing an RIE or other dry etch, shrinkage of the resist pattern during the etch process can be reduced or eliminated.

REFERENCES:
patent: 4812542 (1989-03-01), Schwalm et al.
patent: 5385809 (1995-01-01), Bohrer et al.
patent: 5691110 (1997-11-01), Bohrer et al.
patent: 5814432 (1998-09-01), Kobayashi
patent: 5879851 (1999-03-01), Takahashi
patent: 5968712 (1999-10-01), Thackeray

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