Static information storage and retrieval – Read/write circuit – Including level shift or pull-up circuit
Reexamination Certificate
2007-12-11
2007-12-11
Pham, Ly Duy (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including level shift or pull-up circuit
C365S154000, C365S189011, C365S230030, C365S236000
Reexamination Certificate
active
11134450
ABSTRACT:
A method and apparatus for reducing power consumption in integrated memory devices is provided. Banks of memory cells may be individually put into “sleep” mode via respective “sleep” transistors.
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De Vivek K.
Khellah Muhammad M.
Somasekhar Dinesh
Tang Stephen H.
Tschanz James W.
Burdett James R.
Intel Corporation
Kaminski Jeffri A.
Pham Ly Duy
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