Reducing powder formation in the production of high-purity silic

Details Reducing powder formation in the production of high-purity silic Reducing powder formation in the production of high-purity silic

1984-04-02

1985-12-17

Doll, John

Chemistry of inorganic compounds

Silicon or compound thereof

Elemental silicon

423348, 423349, C01B 3302

Patent

active

045592195

ABSTRACT:
A method of manipulating the rate of homogeneous nucleation of silicon as either a particulate solid or liquid settling out of the gaseous phase during the pyrolysis of silane homologs by controlling the quantity of halogen within the pyrolysis medium. The rate of homogeneous nucleation can be maintained sufficiently low (below 1 silicon nucleus/cm.sup.3 /sec) so as to avoid power formation with a minimum amount of halogen.

REFERENCES:
patent: 3147141 (1964-09-01), Ishizuka
patent: 4102764 (1978-07-01), Harvey, II et al.
patent: 4125643 (1978-11-01), Reuschel et al.
patent: 4147814 (1979-04-01), Yatsurugi et al.
patent: 4150168 (1979-04-01), Yatsurugi et al.
J. Bloem; Journal of Crystal Growth 18, (1973), pp. 70-76.
Carlyle S. Herrick and David W. Woodruff, "The Homogenous Nucleation of Condensed Silicon in the Gaseous Si--H--Cl System", J. of the Electrochemical Society, vol. 131, No. 10, Oct. 1984, pp. 2417-2422.

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