Reducing plasma ignition pressure

Details Reducing plasma ignition pressure Reducing plasma ignition pressure

2007-03-20

2007-03-20

Paschall, Mark (Department: 3742)

Electric heating

Metal heating

By arc

C219S121410, C219S121540

Reexamination Certificate

active

10883583

ABSTRACT:
A method in a plasma processing system for processing a semiconductor substrate is disclosed. The plasma processing system includes a plasma processing chamber and an electrostatic chuck coupled to a bias compensation circuit. The method includes igniting a plasma in a plasma ignition step. Plasma ignition step is performed while a first bias compensation voltage provided by the bias compensation circuit to the chuck is substantially zero and while a first chamber pressure within the plasma processing chamber is below about 90 mTorr. The method further includes processing the substrate in a substrate-processing step after the plasma is ignited. The substrate-processing step employs a second bias compensation voltage provided by the bias compensation circuit that is higher than the first bias compensation voltage and a second chamber pressure substantially equal to the first chamber pressure.

REFERENCES:
patent: 5793192 (1998-08-01), Kubly et al.
patent: 6057244 (2000-05-01), Hausmann et al.
patent: 6562190 (2003-05-01), Kuthi et al.
patent: 2004/0025791 (2004-02-01), Chen et al.
patent: 2004/0134768 (2004-07-01), Wang et al.
patent: 2005/0051100 (2005-03-01), Chiang et al.
PCT International Search Report mailed May 26, 2006, re PCT/US05/21098.
PCT Written Opinion mailed May 26, 2006, re PCT/US05/21098.

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