Reducing oxidation stress in the fabrication of devices

Details Reducing oxidation stress in the fabrication of devices Reducing oxidation stress in the fabrication of devices

1997-09-30

1999-02-02

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Capacitors

365150, G11C 1124

Patent

active

058674209

ABSTRACT:
A random access memory cell having a trench capacitor formed below the surface of the substrate. A shallow trench isolation is provided to isolate the memory cell from other memory cells of a memory array. The shallow trench isolation includes a top surface raised above the substrate to reduce oxidation stress.

REFERENCES:
patent: 5323343 (1994-06-01), Ogoh et al.

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