Reducing leakage current in memory device using bitline...

Details Reducing leakage current in memory device using bitline... Reducing leakage current in memory device using bitline...

2006-03-24

2009-02-17

Hur, J. H. (Department: 2824)

Static information storage and retrieval

Read/write circuit

Signals

C365S196000, C365S200000, C365S225700, C365S230030

Reexamination Certificate

active

07492648

ABSTRACT:
A method for reducing defect leakage current in a semiconductor memory device comprising a plurality of memory banks, each memory bank comprising a plurality of memory arrays and sense amplifier columns comprising a plurality of sense amplifiers, wherein there is a sense amplifier column positioned between and shared by memory arrays on opposites thereof. At least one bank-specific isolation control signal is independently generated for each of the plurality of memory banks depending on existence and location of an anomalous bitline leakage in a memory bank. The at least one bank-specific isolation control signal is supplied to at least one sense amplifier column in the corresponding memory bank to isolate at least one side to at least one memory array that is in an unselected state in a corresponding memory bank.

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