Reducing hillocking in aluminum layers formed on substrates

Details Reducing hillocking in aluminum layers formed on substrates Reducing hillocking in aluminum layers formed on substrates

1990-04-04

1991-02-12

Nguyen, Nam X.

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

437194, 437200, 20419217, C23C 1434, H01L 2144

Patent

active

049921525

ABSTRACT:
A method of reducing hillocks in an aluminum layer sputtered onto a substrate includes depositing a layer of WSi.sub.2 on the aluminum layer having a thickness of between 1500-2500 .ANG. and then sintering these bilayers.

REFERENCES:
patent: 3986897 (1976-10-01), McMillan et al.
patent: 4012756 (1977-03-01), Chaudhari et al.
patent: 4322453 (1982-03-01), Miller
patent: 4384301 (1983-05-01), Tasch, Jr. et al.
B. Draper et al., "A Hillock-Free . . . Interconnects", 1985, Procs. Second Int'l IEEE VLSI Multilevel Interconnection Conf., Santa Clara, Calif., 6/85, pp. 90-101.

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