Reducing drift in chalcogenide devices

Details Reducing drift in chalcogenide devices Reducing drift in chalcogenide devices

2011-05-03

2011-05-03

Pham, Ly D (Department: 2827)

Static information storage and retrieval

Systems using particular element

Amorphous

C257S002000, C257S004000, C257SE31029, C257SE45002, C438S102000

Reexamination Certificate

active

07936593

ABSTRACT:
Chalcogenide materials conventionally used in chalcogenide memory devices and ovonic threshold switches may exhibit a tendency called drift, wherein threshold voltage or resistance changes with time. By providing a compensating material which exhibits an opposing tendency, the drift may be compensated. The compensating material may be mixed into a chalcogenide, may be layered with chalcogenide, may be provided with a heater, or may be provided as part of an electrode in some embodiments. Both chalcogenide and non-chalcogenide compensating materials may be used.

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Pirovano et al., “Low Field Amorphous State Resistance and Threshold Voltage Drift in Chalcogenide Materials”, IEEE Transaction on Electron Device, v. 51, p. 714, 2004.
Kenawy et al, Electrical and Switching Properties of InSe Amorphous Thin Films, Thin Solid Films, vol. 200, Issue 2, May 15, 1991, pp. 203-210.

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