Reducing contamination of semiconductor substrates during...

Details Reducing contamination of semiconductor substrates during... Reducing contamination of semiconductor substrates during...

2011-03-29

2011-03-29

Norton, Nadine G (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

Reexamination Certificate

active

07915170

ABSTRACT:
By providing a protection layer at the bevel region, the deposition of polymer materials during the patterning process of complex metallization structures may be reduced. Additionally or alternatively, a surface topography may be provided, for instance in the form of respective recesses, in order to enhance the degree of adhesion of any materials deposited in the bevel region during the manufacturing of complex metallization structures. Advantageously, the provision of the protection layer providing the reduced polymer deposition may be combined with the modified surface topography.

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