Reduced thickness variation in a material layer deposited in...

Details Reduced thickness variation in a material layer deposited in... Reduced thickness variation in a material layer deposited in...

2006-04-11

2006-04-11

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Optical characteristic sensed

C438S424000, C438S542000, C438S700000, C438S783000, C438S787000

Reexamination Certificate

active

07026172

ABSTRACT:
A high density plasma chemical vapor deposition (HDP-CVD) process is used to deposit silicon dioxide in trenches of various widths. The thickness of the silicon dioxide filling both narrow and wide trenches is made more uniform by reducing an HDP-CVD etch to deposition ratio. The lowered etch to deposition ratio is achieved by lowering a ratio of oxygen to silane gas, by lowering the power of a high frequency bias signal, and by lowering the total gas flow rate.

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