Reduced thermal release effect amplification-type solid...

Details Reduced thermal release effect amplification-type solid... Reduced thermal release effect amplification-type solid...

2006-09-05

2006-09-05

Ometz, David L. (Department: 2615)

Television

Camera, system and detail

Solid-state image sensor

C348S300000

Reexamination Certificate

active

07102677

ABSTRACT:
A solid imaging device includes at least one pixel, the pixel including a photoelectric conversion section and a charge detection node which are coupled to or decoupled from each other via a transfer gate transistor, the charge detection node being coupled to or decoupled from a drain of a reset gate transistor via the reset gate transistor. After the reset gate resets a potential of the charge detection node, the transfer gate transistor is turned ON so as to allow a signal charge to be transferred from the photoelectric conversion section to the charge detection node, and thereafter a potential of the drain is changed from a HIGH state to a LOW state to a HIGH state while both of the transfer gate transistor and the reset gate transistor are maintained in an ON state.

REFERENCES:
patent: 4521106 (1985-06-01), Lambeth
patent: 6667768 (2003-12-01), Fossum
patent: 2003/0193597 (2003-10-01), Fossum et al.
patent: 2-196575 (1990-08-01), None
patent: 11-355668 (1999-12-01), None
patent: 2000-5962 (2000-01-01), None
See Korean Patent Office Action dated Feb. 26, 2003.
Y. Sone, et al. “New Driving Method of CPD Solid-State Imaging Sensor”, Technical Report of the Television Society, ED 621, 1982, pp. 1-6.
R. M. Guidash, et al. “A 0.6μCMOS Pinned Photodiode Color Imager Technology.” IEDM, 1997.

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