Reduced temperature suppression of volatilization of photoexcite

Details Reduced temperature suppression of volatilization of photoexcite Reduced temperature suppression of volatilization of photoexcite

1992-07-10

1994-10-04

McFarlane, Anthony

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 437225, 437946, 148DIG51, B44C 122, H01L 21302

Patent

active

053523270

ABSTRACT:
Wafer surface degradation in a photoexcitation dry cleaning process, due to volatilization of surface halides that allows the exposed silicon surface to be further etched, is obviated by controlling the conditions of the process, specifically silicon wafer surface temperature, such that silicon reaction products that are formed on the surface of the wafer in the presence of the photoexcited disassociated halogen radicals do not volatilize. The silicon wafer is placed upon a low temperature chuck. When the halogen gas within the reaction chamber is irradiated with ultraviolet light, it produces disassociated halogen atoms that react with the surface of said silicon. Irradiation of the halogen gas and the surface of the silicon wafer is controlled by an optical shutter, in order to limit the amount of ultraviolet radiation that strikes and is absorbed by the wafer. The reduced temperature of the wafer prevents volatilization of a surface film containing halogen-contaminant compounds and halogen-silicon reaction products. As a consequence, further reaction of the halogen reactant radicals with silicon underlying the surface film is effectively suppressed. Thereafter, the surface film is removed from the surface of the wafer, for example by increasing its temperature in halogen free chamber at a reduced pressure, or by dissolving the film in a rinse solution, such as water.

REFERENCES:
patent: 4512391 (1985-04-01), Harra
patent: 4542298 (1985-09-01), Holden
patent: 4671204 (1987-06-01), Ballou
patent: 5178721 (1993-01-01), Sugino
"Photoexcited Processes for Semiconductors II: Dry Cleaning and Dry Etching" by Sato, Sugino and Ito; Fujitsu Sci. Tech. J., 27, 4, pp. 317-328 (Dec. 1991).

Affiliated with

Also associated with

Rating

Reduced temperature suppression of volatilization of photoexcite does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Reduced temperature suppression of volatilization of photoexcite, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reduced temperature suppression of volatilization of photoexcite will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-579090