Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-03-29
2005-03-29
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S132000
Reexamination Certificate
active
06872648
ABSTRACT:
The act of blowing an unpassivated electrical fuse (for example, fuse405) using a laser can result in the splattering of the fuse material and result in electrical short circuits. A blast barrier (for example blast barrier406) formed around an area of the fuse that is blown by the laser helps to contain the splattering of the fuse material. The blast barrier may be formed from the same material as the fuses themselves and, therefore, can be created in the same fabrication step.
REFERENCES:
patent: 5567643 (1996-10-01), Lee et al.
patent: 5608257 (1997-03-01), Lee et al.
patent: 5733806 (1998-03-01), Grivna et al.
patent: 5757060 (1998-05-01), Lee et al.
patent: 5914524 (1999-06-01), Komenaka
patent: 6008716 (1999-12-01), Kokubun
patent: 6566729 (2003-05-01), Okada
patent: 01169942 (1989-07-01), None
patent: 11274304 (1999-10-01), None
patent: 2001230325 (2001-08-01), None
Cowley Andy
Fayaz Mohammed Fazil
Friese Gerald R.
Motsiff William T.
Infineon - Technologies AG
Pizarro-Crespo Marcos D.
Slater & Matsil L.L.P.
LandOfFree
Reduced splattering of unpassivated laser fuses does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Reduced splattering of unpassivated laser fuses, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reduced splattering of unpassivated laser fuses will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3443806