Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-03-29
2005-03-29
Nguyen, Cuong (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000
Reexamination Certificate
active
06873001
ABSTRACT:
In a DRAM array using a capacitor-under-bitline (CUB) layout, the plate layer of the capacitor is significantly reduced in area to reduce misalignments in connections between the bitline and the underlying transistors.
REFERENCES:
patent: 6020235 (2000-02-01), Chang
Moroi Masayuki
Nagata Toshiyuki
Satoh Atsushi
Yoshida Hiroyuki
Brady III W. James
McLarty Peter K.
Nguyen Cuong
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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