Patent
1989-12-01
1991-09-10
Hille, Rolf
357 65, 357 90, 357 91, H01L 2348, H01L 2940, H01L 2944, H01L 2952
Patent
active
050478311
ABSTRACT:
A semiconductor device comprising a contact region having reduced contact resistance is provided by the steps of implanting ions of impurities to a predetermined region of a main surface of a semiconductor substrate; forming an impurity diffusion region by applying heat treatment at 400.degree. C.; etching the region from the surface of the semiconductor substrate to the maximum point of an ion concentration to form a metal wiring layer on the exposed surface of the thus formed impurity diffusion region. Since the impurity diffusion region is connected to the metal wiring layer at the maximum point of the ion concentration, the contact resistance can be a low value.
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patent: 4890151 (1989-12-01), Kameda et al.
patent: 4903112 (1990-02-01), Strack et al.
T. E. Seidel, "Ion Implantation", Chapter Six of VLSI Technology, edited by Sze, pp. 219-265.
IEEE Transactions on Electron Devices, article by Tsuji et al., entitled, "Submicrometer Optical Lithography Using a Double-Layer Resist by a Single Development Technology", vol. ED-31, No. 12, Dec. 1984.
Hille Rolf
Mitsubishi Denki & Kabushiki Kaisha
Ostrowski David
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