Reduced resistance base contact for single polysilicon bipolar t

Details Reduced resistance base contact for single polysilicon bipolar t Reduced resistance base contact for single polysilicon bipolar t

1995-06-07

2000-02-22

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With base region having specified doping concentration...

257591, 257557, H01L 2900, H01L 27082

Patent

active

060283459

ABSTRACT:
A bipolar transistor (100) and a method for forming the same. A diffusion source dielectric layer (118) is deposited over a semiconductor body (101). An emitter window (116) is then etched through the diffusion source dielectric layer (118). An extrinsic base region (110) is diffused from the diffusion source dielectric layer (118). The intrinsic base region (108) is then implanted. Base-emitter spacers (120) are then formed followed by the emitter electrode (124) and emitter region (126). The extrinsic base region (110) is self-aligned to the emitter eliminating the alignment tolerances for the lateral diffusion of the extrinsic base implant and an extrinsic base implant.

REFERENCES:
patent: 4740482 (1988-04-01), Hirao
patent: 4879252 (1989-11-01), Komatsu
patent: 5065208 (1991-11-01), Shah et al.
patent: 5289024 (1994-02-01), Ganschow
patent: 5409843 (1995-04-01), Yamauchi et al.

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