Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-06-12
2011-11-01
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21410, C257SE29013, C438S087000
Reexamination Certificate
active
08049276
ABSTRACT:
Disclosed are semiconductor devices and methods of making semiconductor devices. An exemplary embodiment comprises a semiconductor layer of a first conductivity type having a first surface, a second surface, and a graded net doping concentration of the first conductivity type within a portion of the semiconductor layer. The graded portion is located adjacent to the top surface of the semiconductor layer, and the graded net doping concentration therein decreasing in value with distance from the top surface of the semiconductor layer. The exemplary device also comprises an electrode disposed at the first surface of the semiconductor layer and adjacent to the graded portion.
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Benjamin John L.
Grebs Thomas E.
Rinehimer Mark L.
Yedinak Joseph A.
Dickey Thomas L
Fairchild Semiconductor Corporation
Kilpatrick Townsend & Stockton LLP
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