Coating processes – Spray coating utilizing flame or plasma heat – Silicon containing coating
Patent
1994-01-28
1995-10-03
Padgett, Marianne
Coating processes
Spray coating utilizing flame or plasma heat
Silicon containing coating
427557, 4272481, 427294, B05D 306, C23C 1600
Patent
active
054550823
ABSTRACT:
A reduced pressure processing system includes a load lock chamber having an opening communicating with a process atmosphere in which a wafer is processed and/or the outer air atmosphere, a gate valve which is arranged at the opening to close/open the chamber with respect to the process atmosphere and/or the outer air atmosphere, a robot for loading/unloading the wafer into/from the chamber, an evacuation pump for evacuating the chamber, a heater for heating the wall of the chamber, and a controller for controlling the gate valve, the robot, the evacuation pump, and the heater.
REFERENCES:
patent: 4343836 (1982-08-01), Newkirk et al.
patent: 4521458 (1985-06-01), Nelson
patent: 4640233 (1987-02-01), Dozier
patent: 4676884 (1987-06-01), Dimock et al.
patent: 4680061 (1987-07-01), Lamont, Jr.
patent: 4839145 (1989-06-01), Gale et al.
patent: 5044314 (1991-09-01), McNeilly
patent: 5121705 (1992-06-01), Sugino
patent: 5154730 (1992-10-01), Hodos et al.
patent: 5182231 (1993-01-01), Hongo et al.
patent: 5240556 (1993-08-01), Ishikawa et al.
patent: 5322712 (1994-06-01), Norman et al.
J. F. O'Hanlon, A User's Guide to Vacuum Technology, pp. 252-275, 2nd edition, John Wiley & Sons, New York, 1989 (no month).
Ikeda Towl
Ishii Nobuo
Iwata Teruo
Saeki Hiroaki
Saito Masasi
Padgett Marianne
Tokyo Electron Limited
LandOfFree
Reduced pressure processing system and reduced pressure processi does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Reduced pressure processing system and reduced pressure processi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reduced pressure processing system and reduced pressure processi will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1076389