Reduced metal pipe formation in metal silicide contacts

Details Reduced metal pipe formation in metal silicide contacts Reduced metal pipe formation in metal silicide contacts

2011-05-03

2011-05-03

Geyer, Scott B (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S686000

Reexamination Certificate

active

07935632

ABSTRACT:
Formation of metal pipes resulting from formation of metal silicide contacts are reduced or avoided. To reduce formation of metal pipes, an epitaxial layer is formed over the diffusion region on which the metal silicide contact is formed. The epitaxial layer reduces defects which enhances diffusion of metal atoms or molecules.

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D.S. Yaney et al., The use of thin epitaxial silicon layers for MOS VLSI, Electron Devices Meeting, 1981 International, vol. 27, Issue, 1981 pp. 236-239.

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