Static information storage and retrieval – Systems using particular element – Semiconductive
Patent
2000-04-14
2000-12-05
Nguyen, Viet Q.
Static information storage and retrieval
Systems using particular element
Semiconductive
365149, 365174, 365177, 365154, G11C 1140
Patent
active
061575666
ABSTRACT:
The present invention is directed to a memory cell which comprises a storage node, a switching device for controlling access to the storage node, and a diode between the switching device and the storage node. A method for controlling charge transfer to and from a storage node through a switching device is also disclosed.
REFERENCES:
patent: 3739356 (1973-06-01), Pricer
patent: 3740620 (1973-06-01), Agusta et al.
patent: 4408303 (1983-10-01), Guterman et al.
patent: 4922411 (1990-05-01), Hobbs
patent: 5331197 (1994-07-01), Miyawaki et al.
patent: 5406523 (1995-04-01), Foss et al.
patent: 5422305 (1995-06-01), Seabaugh et al.
patent: 5432356 (1995-07-01), Imamura
patent: 5469399 (1995-11-01), Sato et al.
patent: 5535156 (1996-07-01), Levy et al.
patent: 5594698 (1997-01-01), Freeman
patent: 5684748 (1997-11-01), Jang
patent: 5698869 (1997-12-01), Yoshimi et al.
patent: 5801396 (1998-09-01), Chan et al.
patent: 5828620 (1998-10-01), Foss et al.
patent: 5959878 (1999-09-01), Kamp
patent: 5973954 (1999-10-01), Wu et al.
patent: 6005801 (1999-12-01), Wu et al.
Prall Kirk
Reinberg Alan
Thakur Randhir P S
Wu Zhiqiang
Micro)n Technology, Inc.
Nguyen Viet Q.
LandOfFree
Reduced leakage DRAM storage unit does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Reduced leakage DRAM storage unit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reduced leakage DRAM storage unit will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-967221