Reduced leakage DRAM storage unit

Static information storage and retrieval – Systems using particular element – Semiconductive

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Details

365174, 365204, 365145, 365149, 36518502, G11C 1134

Patent

active

061575658

ABSTRACT:
The present invention is directed to a memory cell which comprises a storage node, a switching device for controlling access to the storage node, and a diode between the switching device and the storage node. A method for controlling charge transfer to and from a storage node through a switching device is also disclosed.

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