Static information storage and retrieval – Systems using particular element – Capacitors
Patent
1999-01-07
1999-10-26
Nguyen, Viet Q.
Static information storage and retrieval
Systems using particular element
Capacitors
365174, 365175, 365177, G11C 1134
Patent
active
059739541
ABSTRACT:
The present invention is directed to a memory cell which comprises a storage node, a switching device for controlling access to the storage node, and a diode between the switching device and the storage node. A method for controlling charge transfer to and from a storage node through a switching device is also disclosed.
REFERENCES:
patent: 3739356 (1973-06-01), Pricer
patent: 3740620 (1973-06-01), Agusta et al.
patent: 4408303 (1983-10-01), Guterman et al.
patent: 4922411 (1990-05-01), Hobbs
patent: 5331197 (1994-07-01), Miyawaki et al.
patent: 5422305 (1995-06-01), Seabaugh et al.
patent: 5432356 (1995-07-01), Imamura
patent: 5535156 (1996-07-01), Levy et al.
patent: 5698869 (1997-12-01), Yoshimi et al.
patent: 5801396 (1998-09-01), Chan et al.
Reinberg Alan
Thakur Randhir P S
Wu Zhigiang (Jeff)
Micro)n Technology, Inc.
Nguyen Viet Q.
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