Reduced leakage DRAM storage unit

Details Reduced leakage DRAM storage unit Reduced leakage DRAM storage unit

1997-08-20

1999-12-21

Nguyen, Viet Q.

Static information storage and retrieval

Systems using particular element

Semiconductive

365177, 365154, 365174, G11C 1140

Patent

active

060058013

ABSTRACT:
The present invention is directed to a memory cell which comprises a storage node, a switching device for controlling access to the storage node, and a diode between the switching device and the storage node. A method for controlling charge transfer to and from a storage node through a switching device is also disclosed.

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patent: 5535156 (1996-07-01), Levy et al.
patent: 5698869 (1997-12-01), Yoshimi et al.
patent: 5801396 (1998-09-01), Chan et al.

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