Reduced floating body effect without impact on...

Details Reduced floating body effect without impact on... Reduced floating body effect without impact on...

2011-05-03

2011-05-03

Dang, Phuc T (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S192000, C438S530000

Reexamination Certificate

active

07936017

ABSTRACT:
A method, gated device and design structure are presented for providing reduced floating body effect (FBE) while not impacting performance enhancing stress. One method includes forming damage in a portion of a substrate adjacent to a gate; removing a portion of the damaged portion to form a trench, leaving another portion of the damaged portion at least adjacent to a channel region; and substantially filling the trench with a material to form a source/drain region.

REFERENCES:
patent: 5963809 (1999-10-01), Duane et al.
patent: 6210998 (2001-04-01), Son
patent: 6437375 (2002-08-01), Beaman
patent: 6479866 (2002-11-01), Xiang
patent: 6509613 (2003-01-01), En et al.
patent: 6770517 (2004-08-01), Nakaoka et al.
patent: 7129141 (2006-10-01), Oyu et al.
patent: 7288819 (2007-10-01), Bhattacharyya
patent: 7312137 (2007-12-01), Li
patent: 7446026 (2008-11-01), Zhang et al.
patent: 7554110 (2009-06-01), Yu et al.
patent: 2006/0223292 (2006-10-01), Okonogi et al.
patent: 2007/0252205 (2007-11-01), Hoentschel et al.
patent: 2007/0254444 (2007-11-01), Bloomquist et al.

Affiliated with

Also associated with

Rating

Reduced floating body effect without impact on... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Reduced floating body effect without impact on..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reduced floating body effect without impact on... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2660225