Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-07-01
2008-07-01
Tran, Thien F (Department: 2811)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S479000, C438S517000, C257SE21415
Reexamination Certificate
active
11107935
ABSTRACT:
Aspects of the invention provide a method, in a semiconductor device, such as a thin film transistor, a technology capable of preventing or reducing the electric field concentration at the edge section of the semiconductor film to enhance the reliability. The method of manufacturing a semiconductor device according to the invention can include a first step of forming a semiconductor film discretely on an insulation substrate, a second step of covering the semiconductor film including an edge section of the semiconductor film with a first insulation film, a third step of opening the first insulation film above the semiconductor film excluding the edge section of the semiconductor film, a fourth step of forming a second insulation film thinner than the first insulation film on the semiconductor film corresponding to at least the opening of the first insulation film, and a fifth step of forming an electrode wiring film on the second insulation film.
REFERENCES:
patent: 2003/0189228 (2003-10-01), Ieong et al.
patent: A-6-291308 (1994-10-01), None
patent: A-08-088363 (1996-04-01), None
patent: A 2000-040828 (2000-02-01), None
patent: 2001-135823 (2001-05-01), None
Oliff & Berridg,e PLC
Seiko Epson Corporation
Tran Thien F
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