Reduced defect semiconductor-on-insulator hetero-structures

Details Reduced defect semiconductor-on-insulator hetero-structures Reduced defect semiconductor-on-insulator hetero-structures

2009-07-01

2011-10-18

Nguyen, Dao (Department: 2818)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C438S044000, C438S046000, C438S478000, C438S483000, C257S103000, C257S347000, C257S615000, C257SE21097, C257SE21126, C257SE21131

Reexamination Certificate

active

08039371

ABSTRACT:
A semiconductor-on-insulator hetero-structure and a method for fabricating the semiconductor -on-insulator hetero-structure include a crystalline substrate and a dielectric layer located thereupon having an aperture that exposes the crystalline substrate. The semiconductor-on -insulator hetero-structure and the method for fabricating the semiconductor-on-insulator hetero-structure also include a semiconductor layer of composition different than the crystalline substrate located within the aperture and upon the dielectric layer. A portion of the semiconductor layer located aligned over the aperture includes a defect. A portion of the semiconductor layer located aligned over the dielectric layer does not include a defect. Upon removing the portion of the semiconductor layer located aligned over the aperture a reduced defect semiconductor-on-insulator hetero-structure is formed.

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