Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-02-09
1999-08-24
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
H01L 29788
Patent
active
059427795
ABSTRACT:
A memory apparatus has, on a substrate, a first semiconductor region of one conduction type, second and third semiconductor regions of a conduction type opposite to the one conduction type in contact with the first semiconductor region, a first electrode provided above, and spaced by an insulating layer from, a region separating the second semiconductor region and the third semiconductor region, and a second electrode provided above, and spaced by an insulating layer from, the first electrode. At a side face of the first electrode, a resistance between the first electrode and the second electrode is arranged to change from a high-resistance state into a low-resistance state, thereby realizing large capacitance, low cost, capability of writing, quick writing and reading, high reliability, low dissipation power, and so on.
REFERENCES:
patent: 4146902 (1979-03-01), Tanimoto et al.
patent: 4794565 (1988-12-01), Wu et al.
patent: 5057447 (1991-10-01), Paterson
patent: 5331197 (1994-07-01), Miyawaki et al.
patent: 5365094 (1994-11-01), Takasu
Patent Abstracts of Japan, vol. 001, No. 050 (E-020), May 16, 1977 & JP-A-51 147135 (NEC Corp.) Dec. 17, 1976.
Canon Kabushiki Kaisha
Meier Stephen D.
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