Reduced chemical-mechanical polishing particulate contamination

Details Reduced chemical-mechanical polishing particulate contamination Reduced chemical-mechanical polishing particulate contamination

1995-06-07

1997-12-30

Chu, John S.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437228, 216 89, 216 91, 451 28, H01L 21304

Patent

active

057025630

ABSTRACT:
Particulate contamination of a semiconductor wafer subjected to chemical-mechanical polishing is reduced by applying a high pressure water spray to the polishing pad during conditioning.

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